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jmnic product specification silicon pnp power transistors 2SA1771 description ? with to-220f package ? low collector saturation voltage ? high speed switching time applications ? high current switching pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ?? ) symbol parameter conditions max unit v cbo collector-base voltage open emitter -80 v v ceo collector-emitter voltage open base -80 v v ebo emitter-base voltage open collector -14 v i c collector current -12 a i b base current -1.2 a p c collector dissipation t c =25 ?? 30 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-220f) and symbol
jmnic product specification 2 silicon pnp power transistors 2SA1771 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-50ma ;i b =0 -80 v v cesat collector-emitter saturation voltage i c =-6a ;i b =-0.3a -0.4 v v besat base-emitter saturation voltage i c =-6a; i b =-0.3a -1.2 v i cbo collector cut-off current v cb =-80v; i e =0 -10 | a i ebo emitter cut-off current v eb =-14v; i c =0 -10 | a h fe-1 dc current gain i c =-1a ; v ce =-1v 100 320 h fe-2 dc current gain i c =-6a ; v ce =-1v 40 f t transition frequency i c =-1a ; v ce =-5v 50 mhz c ob collector output capacitance f=1mhz;v cb =-10v 300 pf t on turn-on time 0.2 | s t s storage time 0.6 | s t f fall time i b1 =-i b2 =-0.3a; v cc =-30v r l =5 |? duty cycle ? 1% 0.1 | s
jmnic product specification 3 silicon pnp power transistors 2SA1771 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.10 mm)
jmnic product specification 4 silicon pnp power transistors 2SA1771

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